dm p2100ufu document number: ds 37946 rev. 1 - 2 1 of 7 www.diodes.com may 2015 ? diodes incorporated advance information dm p2100ufu new product dual p - channel enhancement mode mosfet product summary v (br)dss r ds( on ) max i d t a = + 25 c - 2 0v 38m @ v gs = - 10v - 5.7a 43m @ v gs = - 4.5v - 5.4a 75m @ v gs = - 2.5v - 4.1a description this new generation mosfet has been designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? power m anagement f unctions ? battery pack ? load switch features ? low on - resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: u - dfn 203 0 - 6 ? case material: molded plastic, Dgreen molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections C nipdau over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.01 2 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm p2100 u fu - 7 u - dfn2030 - 6 3000 / tape & reel dm p2100 u fu - 13 u - dfn2030 - 6 10 000 / tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information p21 = product type marking code y yww = date code marking y y = last d igit of y ear ( ex: 1 4 for 20 1 4 ) ww = week c ode (01 to 53) p21 y y w w esd protected bottom view u - dfn 203 0 - 6 equivalent circuit t op view d1 s 1 g1 g ate protection diode d 2 s2 g2 g ate protection diode e4
dm p2100ufu document number: ds 37946 rev. 1 - 2 2 of 7 www.diodes.com may 2015 ? diodes incorporated advance information dm p2100ufu new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 20 v gate - source voltage v gss 10 v continuous drain current (note 6 ) v gs = - 10v steady state t a = +25c t a = +70c i d - 5.7 - 4.4 a maximum continuous body diodes forward current (note 6 ) i s - 2 a pulsed drain current (10s pulse, duty cycle = 1%) i dm - 30 a avalanche current (note 7) l = 0.1mh i as - 15 a avalanche energy (note 7) l = 0.1mh e as 12 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 0. 9 w thermal resistance, junction to ambient (note 5 ) s teady state r ja 1 38 c/w total power dissipation (note 6 ) t a = + 25c p d 1. 9 w thermal resistance, junction to ambient (note 6 ) s teady state r ja 66 c/w thermal resistance, junction to case r j c 9. 6 operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 20 gs = 0v, i d = - 250a zero gate voltage drain current i dss ds = - 20 v, v gs = 0v gate - source leakage i gss gs = 8v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) - 0. 3 ds = v gs , i d = - 250a static drain - source on - resistance r ds (on) gs = - 10 v, i d = - 3.5 a gs = - 4.5v, i d = - 3 a gs = - 2 .5v, i d = - 1 a gs = - 1 . 8 v, i d = - 0.5 a diode forward voltage v sd gs = 0v, i s = - 2.9 a dynamic characteristics (note 9 ) input capacitance c iss ds = - 1 0 v, v gs = 0v f = 1.0mhz output capacitance c oss rss g ? ds = 0v, v gs = 0v, f = 1.0mhz total gate charge ( v gs = - 4.5 v ) q g d s = - 10 v , i d = - 4 a total gate charge ( v gs = - 10 v ) q g gs gd d( on ) ds = - 10v, v gs = - 4.5v, r l = 2.5, r g = 3.0 r d( off ) f rr f = - 3.5 a, di/dt = - 1 0 0a/s rr f = - 3.5 a, di/dt = - 1 0 0a/s notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . i a s and e a s rating are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm p2100ufu document number: ds 37946 rev. 1 - 2 3 of 7 www.diodes.com may 2015 ? diodes incorporated advance information dm p2100ufu new product 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1. typical output characteristic v gs = - 1.0v v gs = - 1.2v v gs = - 1.5v v gs = - 2.0v v gs = - 2.5v v gs = - 4.0v v gs = - 3.0v v gs = - 4.5v 0 5 10 15 20 0 1 2 3 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = - 5 v t a = - 55 a =25 a =85 a =125 a =150 ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs drain current and gate voltage v gs = - 2.5v v gs = - 4.5v 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 2 4 6 8 10 12 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = - 4.0a 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( ? d , drain current(a) figure 5. typical on - resistance vs drain current and temperature v gs = - 4.5v t a = - 55 a =25 a =85 a =125 a =150 ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = - 4.5v, i d = - 10a v gs = - 2.5v, i d = - 5a
dm p2100ufu document number: ds 37946 rev. 1 - 2 4 of 7 www.diodes.com may 2015 ? diodes incorporated advance information dm p2100ufu new product 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs = - 2.5v, i d = - 5a v gs = - 4.5v, i d = - 10a 0 0.2 0.4 0.6 0.8 1 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 1ma i d = - 250 a 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs current v gs =0v t a = - 55 a =25 a =85 a =125 a =150 t , junction capacitance ( pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 22 v gs (v) q g (nc) figure 11. gate charge v ds = - 10v, i d = - 4a 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 a =25 gs = - 4.5v single pulse dut on 1*mrp board r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm p2100ufu document number: ds 37946 rev. 1 - 2 5 of 7 www.diodes.com may 2015 ? diodes incorporated advance information dm p2100ufu new product 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r ja (t)=r(t) * r ja r ja =1 38
dm p2100ufu document number: ds 37946 rev. 1 - 2 6 of 7 www.diodes.com may 2015 ? diodes incorporated advance information dm p2100ufu new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. u - dfn 2030 - 6 (type b) dim min max typ a 0. 55 0. 65 0.60 a1 0 .00 0.05 0.02 a 3 -- -- 0.15 b 0. 20 0. 30 0. 25 d 1.95 2.05 2 . 0 0 d2 1.40 1.60 1.50 e 2.95 3. 05 3. 0 0 e2 1.65 1.75 1.70 e -- -- 0.50 l 0. 28 0. 38 0. 33 z -- -- 0.375 all dimensions in mm dimensions value (in mm) g 0.220 x 0.350 x1 0.850 x2 1.600 x3 1.350 y 0.530 y1 1.800 y2 3.300 d e e b l e2 z(4x) a a1 a3 seating plane d2 pin#1 id y1 y x x1 x2 y2 g x3
dm p2100ufu document number: ds 37946 rev. 1 - 2 7 of 7 www.diodes.com may 2015 ? diodes incorporated advance information dm p2100ufu new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
|
